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ON SEMICONDUCTOR  BC846BWT1G  Bipolar (BJT) Single Transistor, General Purpose, NPN, 65 V, 100 MHz, 150 mW, 100 mA, 200 hFE

ON SEMICONDUCTOR BC846BWT1G
Technical Data Sheet (105.78KB) EN See all Technical Docs

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Product Information

Automotive Qualification Standard:
-
Collector Emitter Voltage V(br)ceo:
65 V
DC Collector Current:
100 mA
DC Current Gain hFE:
200 hFE
MSL:
MSL 1 - Unlimited
No. of Pins:
3 Pins
Operating Temperature Max:
150 °C
Power Dissipation Pd:
150 mW
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)
Transistor Case Style:
SOT-323
Transistor Polarity:
NPN
Transition Frequency ft:
100 MHz

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000032

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Bipolar (BJT) Single Transistor, General Purpose, NPN, 65 V, 100 MHz, 150 mW, 100 mA, 100 hFE

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  • Power Dissipation Pd: 150mW
  • DC Collector Current: 100mA
  • Collector Emitter Voltage V(br)ceo: 65V
  • Transition Frequency ft: 100MHz
  • Operating Temperature Max: 150°C
  • Transistor Polarity: NPN
  • DC Current Gain hFE: 200hFE
  • No. of Pins: 3Pins
  • Product Range: -
  • Automotive Qualification Standard: -
  • Transistor Case Style: SOT-323