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NXP  PUMZ1,115  Bipolar (BJT) Single Transistor, NPN, PNP, 40 V, 100 MHz, 200 mW, 100 mA, 120 hFE

NXP PUMZ1,115
Technical Data Sheet (105.12KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN, PNP
Collector Emitter Voltage V(br)ceo:
40V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
200mW
DC Collector Current:
100mA
DC Current Gain hFE:
120hFE
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001