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NXP  PUMH11,115  Bipolar Transistor Array, BRT, NPN, 50 V, 200 mW, 100 mA, 30 hFE, SOT-363

NXP PUMH11,115
Technical Data Sheet (611.91KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
50V
Power Dissipation Pd:
200mW
DC Collector Current:
100mA
DC Current Gain hFE:
30hFE
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001

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