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NXP  PBSS5540Z,115  Bipolar (BJT) Single Transistor, PNP, -40 V, 120 MHz, 1.35 W, -5 A, 350 hFE

NXP PBSS5540Z,115
Technical Data Sheet (144.06KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-40V
Transition Frequency ft:
120MHz
Power Dissipation Pd:
1.35W
DC Collector Current:
-5A
DC Current Gain hFE:
350hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, PNP, 40 V, 120 MHz, 1.35 W, 5 A, 350 hFE

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