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NXP  PBSS5250X,115  Bipolar (BJT) Single Transistor, PNP, -50 V, 100 MHz, 550 mW, -2 A, 200 hFE

NXP PBSS5250X,115
NXP PBSS5250X,115
Technical Data Sheet (147.21KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

NXP PBSS5250X,115
NXP PBSS5250X,115

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-50V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
550mW
DC Collector Current:
-2A
DC Current Gain hFE:
200hFE
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, PNP, 50 V, 550 mW, 2 A, 200 hFE

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