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NXP  PBSS4230PANP  Bipolar (BJT) Single Transistor, NPN, PNP, 30 V, 120 MHz, 2 W, 2 A, 150 hFE

NXP PBSS4230PANP
Technical Data Sheet (341.02KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN, PNP
Collector Emitter Voltage V(br)ceo:
30V
Transition Frequency ft:
120MHz
Power Dissipation Pd:
2W
DC Collector Current:
2A
DC Current Gain hFE:
150hFE
Transistor Case Style:
SOT-1118
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000002

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