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NXP  PBSS4230PANP  Bipolar (BJT) Single Transistor, NPN, PNP, 30 V, 120 MHz, 2 W, 2 A, 150 hFE

NXP PBSS4230PANP
Technical Data Sheet (341.02KB) EN See all Technical Docs

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Product Information

Automotive Qualification Standard:
-
Collector Emitter Voltage V(br)ceo:
30 V
DC Collector Current:
2 A
DC Current Gain hFE:
150 hFE
MSL:
MSL 1 - Unlimited
No. of Pins:
6 Pins
Operating Temperature Max:
150 °C
Power Dissipation Pd:
2 W
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)
Transistor Case Style:
SOT-1118
Transistor Polarity:
NPN, PNP
Transition Frequency ft:
120 MHz

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000002

Associated Products

Similar Products

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  • Power Dissipation Pd: 2W
  • DC Collector Current: 2A
  • Collector Emitter Voltage V(br)ceo: 30V
  • Transition Frequency ft: 120MHz
  • Operating Temperature Max: 150°C
  • Transistor Polarity: NPN, PNP
  • DC Current Gain hFE: 150hFE
  • No. of Pins: 6Pins
  • Product Range: -
  • Automotive Qualification Standard: -
  • Transistor Case Style: SOT-1118