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NXP  PBSS4160U,115  Bipolar (BJT) Single Transistor, NPN, 60 V, 220 MHz, 250 mW, 1 A, 500 hFE

NXP PBSS4160U,115
Technical Data Sheet (202.93KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
220MHz
Power Dissipation Pd:
250mW
DC Collector Current:
1A
DC Current Gain hFE:
500hFE
Transistor Case Style:
SOT-323
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, NPN, 60 V, 220 MHz, 250 mW, 1 A, 500 hFE

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