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NXP  PBSS4041SPN  Bipolar Transistor Array, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC

NXP PBSS4041SPN
Technical Data Sheet (508.36KB) EN See all Technical Docs

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Product Overview

The PBSS4041SPN is a 60V NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for load switch, battery driven devices and charging circuits.
  • 150°C Junction temperature
  • Smaller required printed-circuit board (PCB) area than for conventional transistors
  • High collector current capability
  • High collector current gain

 

Product Information

Transistor Polarity:
NPN, PNP
Collector Emitter Voltage V(br)ceo:
60V
Power Dissipation Pd:
2.3W
DC Collector Current:
6.7A
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Thailand

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000141

Alternatives

Bipolar Transistor Array, NPN, PNP, 60 V, 2.3 W, 6.7 A, 500 hFE, SOIC

NXP

Reel
Awaiting Delivery (Available for backorder to lead times shown)

Price for: Each (Supplied on Full Reel)

1000+ $1.01

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