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NXP  PBHV8540Z,115  Bipolar (BJT) Single Transistor, NPN, 400 V, 30 MHz, 700 mW, 500 mA, 200 hFE

NXP PBHV8540Z,115
Technical Data Sheet (121.10KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
400V
Transition Frequency ft:
30MHz
Power Dissipation Pd:
700mW
DC Collector Current:
500mA
DC Current Gain hFE:
200hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, NPN, 400 V, 30 MHz, 700 mW, 500 mA, 200 hFE

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