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NXP  BSR33,115  Bipolar (BJT) Single Transistor, PNP, -80 V, 100 MHz, 1.35 W, -1 A, 100 hFE

NXP BSR33,115
Technical Data Sheet (112.35KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-80V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
1.35W
DC Collector Current:
-1A
DC Current Gain hFE:
100hFE
Transistor Case Style:
SOT-89
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Hong Kong

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, PNP, -80 V, 100 MHz, 1.35 W, -1 A, 100 hFE

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