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NXP  BCP55,115  Bipolar (BJT) Single Transistor, NPN, 60 V, 180 MHz, 640 mW, 1 A, 63 hFE

NXP BCP55,115
Technical Data Sheet (1.12MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
180MHz
Power Dissipation Pd:
640mW
DC Collector Current:
1A
DC Current Gain hFE:
63hFE
Transistor Case Style:
SOT-223
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
BCP55 Series
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001

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Bipolar (BJT) Single Transistor, NPN, 60 V, 180 MHz, 640 mW, 1 A, 63 hFE

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