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NXP  BC857C,215  Bipolar (BJT) Single Transistor, General Purpose, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 420 hFE

NXP BC857C,215
Technical Data Sheet (158.11KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BC857C from NXP are surface mount, PNP general purpose transistors in SOT-23 package. Features high current and low voltage characteristics. Applicable at general purpose switching and amplification.
  • Automotive grade AEC-Q101 qualified
  • Collector to emitter Voltage (Vce) of -45V
  • Collector current of -100mA
  • DC current gain of 420 at Ic=-2mA
  • Collector emitter saturation of -75mV at -10mA collector current
  • Operating ambient temperature range from -65°C to 150°C

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-45V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
250mW
DC Collector Current:
-100mA
DC Current Gain hFE:
420hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
BC857 Series
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000008

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