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NXP  BC856S,115  Bipolar Transistor Array, Dual PNP, -65 V, 220 mW, -100 mA, 110 hFE, SOT-363

NXP BC856S,115
Technical Data Sheet (87.18KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
Dual PNP
Collector Emitter Voltage V(br)ceo:
-65V
Power Dissipation Pd:
220mW
DC Collector Current:
-100mA
DC Current Gain hFE:
110hFE
Transistor Case Style:
SOT-363
No. of Pins:
6Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.001

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