Bipolar (BJT) Single Transistor, Darlington, PNP, -80 V, 65 W, -5 A, 1000 hFE
Image is for illustrative purposes only. Please refer to product description.
- Monolithic construction with built-in base-emitter shunt resistors
- Collector-emitter sustaining voltage (Vceo (sus) = 80V minimum)
- Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 3A)