Low

MULTICOMP  BD139-10  Bipolar (BJT) Single Transistor, NPN, 80 V, 12.5 W, 1.5 A, 63

MULTICOMP BD139-10
Technical Data Sheet (301.92KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation.
  • Collector-base voltage(Vcbo = 100V)
  • Emitter-base voltage(Vebo = 5V)

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
-
Power Dissipation Pd:
12.5W
DC Collector Current:
1.5A
DC Current Gain hFE:
63hFE
Transistor Case Style:
TO-126
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
India

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.00068

Associated Products

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.