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MULTICOMP  2N5686  Bipolar (BJT) Single Transistor, NPN, 80 V, 2 MHz, 300 W, 50 A, 15 hFE

MULTICOMP 2N5686
Technical Data Sheet (186.49KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N5686 is a -80V Silicon PNP Power Transistor designed for use in high power amplifier and switching circuit applications.
  • High current capability
  • Low collector-emitter saturation voltage

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
2MHz
Power Dissipation Pd:
300W
DC Collector Current:
50A
DC Current Gain hFE:
15hFE
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Taiwan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.013608

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