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IXYS SEMICONDUCTOR  IXFH60N50P3  MOSFET Transistor, N Channel, 60 A, 500 V, 0.1 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR IXFH60N50P3
Technical Data Sheet (176.29KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IXFH60N50P3 is a 500V N-channel Enhancement Mode Polar3™ Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
  • Avalanche rated
  • Low inductance
  • High power density
  • Easy to mount
  • Space-saving s

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
60A
Drain Source Voltage Vds:
500V
On Resistance Rds(on):
0.1ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
5V
Power Dissipation Pd:
1.04kW
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Germany

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.006

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