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INFINEON  IRLS3036-7PPBF  MOSFET Transistor, N Channel, 180 A, 60 V, 0.0015 ohm, 4.5 V, 2.5 V

INFINEON IRLS3036-7PPBF
Technical Data Sheet (307.74KB) EN See all Technical Docs

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Product Overview

The IRLS3036-7PPBF is a 60V single N-channel HEXFET Power MOSFET for high efficiency synchronous rectification in SMPS. It is optimized for logic level drive and features improved gate, avalanche and dynamic dv/dt ruggedness. The MOSFET is used in high speed power switching, hard switched and high frequency circuits.
  • Very low RDS(ON) at 4.5V VGS
  • Superior R*Q at 4.5V VGS
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dv/dt and dI/dt capability
  • Trench MOSFET technology
  • ±16V Gate to source voltage
  • 2.5W/°C Linear derating factor
  • 0.40°C/W Thermal resistance, junction to case
  • 40°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
180A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.0015ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
2.5V
Power Dissipation Pd:
380W
Transistor Case Style:
TO-263
No. of Pins:
7Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Motor Drive & Control;
  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00245