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INFINEON  IRFU9024NPBF  MOSFET Transistor, P Channel, -11 A, -55 V, 175 mohm, -10 V, -4 V

INFINEON IRFU9024NPBF
Technical Data Sheet (1.35MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
  • Ultra low on-resistance
  • Advanced process technology
  • Fully avalanche rated

 

Product Information

Automotive Qualification Standard:
-
Continuous Drain Current Id:
-11 A
Drain Source Voltage Vds:
-55 V
MSL:
-
No. of Pins:
3 Pins
On Resistance Rds(on):
0.175 ohm
Operating Temperature Max:
150 °C
Power Dissipation Pd:
38 W
Product Range:
-
Rds(on) Test Voltage Vgs:
-10 V
SVHC:
No SVHC (17-Dec-2015)
Threshold Voltage Vgs:
-4 V
Transistor Case Style:
TO-251AA
Transistor Polarity:
P Channel

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Y-Ex
Tariff No:
85412900
Weight (kg):
.000454

Associated Products

Similar Products

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  • Power Dissipation Pd: 38W
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: -11A
  • Transistor Polarity: P Channel
  • No. of Pins: 3Pins
  • Threshold Voltage Vgs: -4V
  • Product Range: -
  • Automotive Qualification Standard: -
  • Drain Source Voltage Vds: -55V
  • Rds(on) Test Voltage Vgs: -10V
  • Transistor Case Style: TO-251AA
  • On Resistance Rds(on): 0.175ohm