Low

IPD65R225C7ATMA1 - 

Power MOSFET, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V

INFINEON IPD65R225C7ATMA1

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IPD65R225C7ATMA1
Order Code:
2420495
Also Known As:
IPD65R225C7 , SP000929430
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
63W
:
150°C
:
11A
:
N Channel
:
3Pins
:
3.5V
:
-
:
650V
:
10V
:
TO-252
:
0.199ohm
:
-
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Product Overview

The IPD65R225C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
  • Increased dV/dt ruggedness
  • Better efficiency due to best in class FOM RDS (ON) x Eoss and RDS (ON) x Qg
  • Best in class RDS (ON)
  • Easy to use/drive
  • Halogen-free
  • Enabling higher system efficiency
  • Enabling higher frequency
  • Increased power density solutions
  • Size savings due to reduced cooling requirements
  • Higher system reliability due to lower operating temperatures
  • Reduced energy stored in output capacitance(Eoss)
  • Low switching losses
  • Outstanding CoolMOS™ quality

Applications

Industrial, Power Management, Communications & Networking, Alternative Energy

Footnotes

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.

Also Known As

IPD65R225C7 , SP000929430

Associated Products