Low

INFINEON  IPD65R190C7ATMA1  Power MOSFET, N Channel, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V

INFINEON IPD65R190C7ATMA1
Technical Data Sheet (1.83MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IPD65R190C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge
  • Space-saving through reduction of parts
  • Improved safety margin
  • Lowest conduction losses
  • Low switching losses
  • Better light load efficiency
  • Increasing power density

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
13A
Drain Source Voltage Vds:
650V
On Resistance Rds(on):
0.168ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3.5V
Power Dissipation Pd:
72W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Communications & Networking;
  • Computers & Computer Peripherals;
  • Alternative Energy

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000006

Associated Products