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FAIRCHILD SEMICONDUCTOR  FDMQ8203  Dual MOSFET, N and P Channel, 6 A, 100 V, 0.085 ohm, 10 V, 3 V

FAIRCHILD SEMICONDUCTOR FDMQ8203
Technical Data Sheet (408.90KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDMQ8203 is a 100V Dual N-channel and Dual P-channel PowerTrench® MOSFET, GreenBridge™ series of high-efficiency bridge rectifiers provides ten-fold improvement in power dissipation over diode bridge. Used in bridge rectifier applications. Specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild's the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification.

 

Product Information

Transistor Polarity:
N and P Channel
Continuous Drain Current Id:
6A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.085ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
22W
Transistor Case Style:
MLP
No. of Pins:
12Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000272

Associated Products