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DIODES INC.  2N7002-7-F  MOSFET Transistor, N Channel, 115 mA, 60 V, 13.5 ohm, 10 V, 2.5 V

DIODES INC. 2N7002-7-F
Technical Data Sheet (217.18KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. The case is made of molded plastic, "Green" molding compound (UL94V-0).
  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Halogen and antimony-free
  • Green device
  • Qualified to AEC-Q101 standards for high reliability

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
115mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
13.5ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.5V
Power Dissipation Pd:
300mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Motor Drive & Control;
  • Power Management;
  • Aerospace, Defence, Military

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000008

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